New tunneling field effect transistors operating at extremely-low power consumption
Utilizing a structure combining strained-Silicon with Germanium
Graduate School of Engineering / Faculty of Engineering
The research group of Professor Shinichi Takagi and Associate Professor Mitsuru Takenaka in the University of Tokyo Graduate School of Engineering Department of Electrical Engineering and Information Systems have succeeded in development of a new tunnel field effect transistor (tunnel FET) able to operate using an extremely low supply voltage.
The increase in power consumption of IT devices is a matter of major international concern. There is intense competition to develop very-low power consumption devices operating on different principles to conventional MOS (metal oxide semiconductor) transistors.
In this study, research group created a novel tunnel field effect transistor with junctions composed of Germanium sources and strained-Silicon channels and having almost the same device structure as conventional MOS transistors. It has been demonstrated that this MOSFET exhibits world-record high ratio of on-current to off-current with steep current change on a minute change in gate voltage. This device opens the way to realizing integrated circuits operating at a supply voltage of 0.3 V and lower, potentially enabling a significant reduction in power consumption by IT devices and new applications including the development of batteryless circuits.
This research was carried out under the Japan Science and Technology Agency (JST) CREST Research Project “Innovative nano-electronics through interdisciplinary collaboration among material, device and system layers” (Development of Tunneling MOSFET Technologies for Integrated Circuits with Ultra-Low Power Consumption).
M.-S. Kim, Y. Wakabayashi, R. Nakane, M. Yokoyama, M. Takenaka and S. Takagi,
“High Ion/Ioff Ge-source ultrathin body strained-SOI Tunnel FETs – impact of channel strain, MOS interfaces and back gate on the electrical properties”,
Tech. Dig. International Electron Device Meeting (IEDM) 2014: p. 331-334.