Quantum Electronics and Spintronics

  • 2.3 Quantum materials(Topological materials/Thermoelectric devices/Functional materials)
Satoru Nakatsuji
Graduate School of Science
The aim of this investigation is to develop new topological magnets that exhibit gigantic electrical and magnetic responses. Manipulation of their nanoscale domain structures may lead to conceptually new spintronic devices with unprecedented energy efficiency and storage capacity, heralding a new era of information technology. In particular, antiferromagnetic materials facilitate the design of more highly integrated and high-speed memory cells compared to their commonly used ferromagnetic counterparts. Based on our discoveries of new materials with interesting functions such as topological antiferromagnets, our project aims to develop a new scheme of nonvolatile memory and logic circuits beyond 5G technology, which is necessary for the evolution to a smart and sustainable society.
Fig.1 Schematic figures showing anomalous Hall effect (AHE) in (a) ferromagnets, (b) antiferromagnets, and (c) Weyl antiferromagnets. Generally, anomalous Hall effects scale with magnetization. Ferromagnets exhibit the large AHE (a). Antiferromagnets generally do not exhibit significant AHE since they have almost no magnetization (b). Weyl antiferromagnets exhibit a fictitious field induced large AHE, which is comparable to that observed in ferromagnets (c).
U. Tokyo
Fig.2 Current induced switching of the anomalous Hall effect in Mn3Sn/nonmagnetic-metal bilayer devices. (a) Hall voltage vs write current for Mn3Sn/Pt, Mn3Sn/Cu and Mn3Sn/W devices at room temperature. (b) Multi-level switching in Mn3Sn/Pt devices.
U. Tokyo

Related links

Related publications

H. Tsai, T. Higo et al., Nature 580, 680 (2020).
T. Higo et al., Nature Photon. 12, 73 (2018).
S. Nakatusji et al., Nature 527, 212 (2015).

Related patents

特願2017-530866 メモリ素子 中辻 知 国立大学法人東京大学


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