Quantum Electronics and Spintronics

The aim of this investigation is to develop new topological magnets that exhibit gigantic electrical and magnetic responses. Manipulation of their nanoscale domain structures may lead to conceptually new spintronic devices with unprecedented energy efficiency and storage capacity, heralding a new era of information technology. In particular, antiferromagnetic materials facilitate the design of more highly integrated and high-speed memory cells compared to their commonly used ferromagnetic counterparts. Based on our discoveries of new materials with interesting functions such as topological antiferromagnets, our project aims to develop a new scheme of nonvolatile memory and logic circuits beyond 5G technology, which is necessary for the evolution to a smart and sustainable society.

H. Tsai, T. Higo et al., Nature 580, 680 (2020).
T. Higo et al., Nature Photon. 12, 73 (2018).
S. Nakatusji et al., Nature 527, 212 (2015).

特願2017-530866　メモリ素子　中辻　知　国立大学法人東京大学