Measurement of complex refractive index in the EUV region with tunable extreme ultraviolet high harmonic source

  • 2.3 Quantum materials(Topological materials/Thermoelectric devices/Functional materials)
  • 2.5 Quantum wiring/Quantum electronics/Electronics for Quantum Information
Junji Yumoto
Graduate School of Science
Project Researcher Project Professor, The University of Tokyo
Ultrashort ultraviolet (EUV) lithography technology is becoming the core of the next generation semiconductor process technology and is an important technology in the semiconductor strategy. In this lithography, EUV light with a wavelength of 13.5 nm is used, but sufficient optical properties of metals, semiconductors and even dielectric materials in this wavelength have not been obtained. We will establish an evaluation technique for optical constants in this wavelength range using the double-slit method and apply this knowledge to the design and development of quantum devices.
Measurement of complex refractive index with a table-top tunable extreme ultraviolet high harmonic source
Left figure:Double slit interference image at the wavelength of 16.7 nm for the reference (a) and evaluation (b) double slits. The sample is 156nm-thick aluminum. Right figure:Dependence of the phase difference (a) and transmittance T (b) on the photon energy

Research collaborators

Yusuke Morita    Assistant Professor
Hiroyuki Shimada Project Research Associate

Related publications

D. Hirano、et al, Measurement of complex refractive index with tunable extreme ultraviolet high harmonic source, Optics Express 29, 15148 (2020).
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