Physics and device applications of semiconductor quantum nanostructures


- 3.1 Data Processing Device/Material (Scaled CMOS, Novel Switch, 3D Integration, etc.)
- 3.4 Data Generation Device/Material (Novel Sensor Device, etc.)
- 3.7 Advanced Device/Material Evaluation Measurement Techniques (SEM, AFM, OCD, TEM, etc.)
Kazuhiko Hirakawa
Institute of Industrial Science
Professor Director, Professor Institute for Nano Quantum Information Electronics
In the nanometer-sized semiconductor structures (quantum nanostructures), new physics based on quantum mechanics appear. We conduct the research with the goal of elucidating new physics that appear in such "quantum semiconductors" and applying them to novel device applications. In particular, we investigate the electronic properties and carrier dynamics in quantum nanostructures using ultra-high frequency electromagnetic waves called terahertz (THz) radiation, and developing novel devices for generation and detection of THz electromagnetic waves as well as thermionic cooling devices.
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Research collaborators
- The University of Tokyo
- Tohoku University
- Tokyo University of Agriculture and technology
- National Institute for Communications Technology
- Ecole Normale Superieure (France)
- LIMMS-CNRS (France)
- University of Twente (the Netherlands)
Related publications
- N. Sekine and K. Hirakawa: "Dispersive terahertz gain of non-classical oscillator: Bloch oscillation in semiconductor superlattices”, Physical Review Letters, vol. 94, No. 5, 057408 (2005).
- Y. Zhang, K. Shibata, N. Nagai, C. Ndebeka-Bandou, G. Bastard, and K. Hirakawa: “Terahertz intersublevel transitions in single self-assembled InAs quantum dots with variable electron numbers”, Nano Letters, vol. 15, pp. 1166~1170 (2015).
- Y. Zhang, Y. Watanabe, S. Hosono, Nagai, and K. Hirakawa: “Room temperature, very sensitive thermometer using a doubly clamped microelectromechanical beam resonator for bolometer applications”, Applied Physics Letters, vol. 108, pp. 163503-1~4 (2016).
- A. Yangui, M. Bescond, T. Yan, N. Nagai and K. Hirakawa: “Evaporative electron cooling in asymmetric double barrier semiconductor heterostructures”, Nature Communications, (2019)10: 4504.
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Contact
- Institute of Industrial Science
- Tel: +81-3-5452-6260
- Email: hirakawa[at]iis.u-tokyo.ac.jp
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