Ferromagnetic quantum heterostructures: Creation of functional properties and spintronics device applications
- 2.1 Quantum bits, memories, devices(Superconducting circuits, Ion trapping, Trapped cold atoms, Photons, Quantum dots, etc.)
- 2.3 Quantum materials(Topological materials/Thermoelectric devices/Functional materials)
- 2.5 Quantum wiring/Quantum electronics/Electronics for Quantum Information
Masaaki Tanaka
Graduate School of Engineering
Director, Center for Spintronics Research Network (CSRN), Professor
We aim to create materials and devices with functions of non-volatility, low-power consumption, reconfigurability, flexible information processing, and/or non-reciprocality.
We introduce magnetic elements and ferromagnetic materials into semiconductor materials, their quantum heterostructure/nanostructures, and device structures, control their quantum size effects, tunnel effects, charge/spin transport, and spin states, design and fabricate new functional materials and low-power spin devices.
We introduce magnetic elements and ferromagnetic materials into semiconductor materials, their quantum heterostructure/nanostructures, and device structures, control their quantum size effects, tunnel effects, charge/spin transport, and spin states, design and fabricate new functional materials and low-power spin devices.
Tanaka-Ohya Lab, Graduate School of Engineering
Tanaka-Ohya Lab, Graduate School of Engineering
Related links
Research collaborators
- Tokyo Institute of Technology
Related publications
- Miao Jiang, H. Asahara, S. Sato, T. Kanaki, H. Yamasaki, Shinobu Ohya, and Masaaki Tanaka, "Efficient full spin-orbit torque switching in a single layer of a perpendicularly magnetized single-crystalline ferromagnet", Nature Communications 10, pp.2590/1-6 (2019).
- Kosuke Takiguchi, Le Duc Anh, Takahiro Chiba, Tomohiro Koyama, Daichi Chiba, Masaaki Tanaka, "Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic / nonmagnetic bilayers", Nature Physics 15, pp.1134-1139 (2019).
- Le Duc Anh, Shingo Kaneta, Masashi Tokunaga, Munetoshi Seki, Hitoshi Tabata, Masaaki Tanaka, and Shinobu Ohya "High-Mobility 2D Hole Gas at a SrTiO3 Interface", Adv. Mater. 32, 1906003 (2020).
