Quantum devices fabricated by integration of semiconductor and superconductor

  • 2.1 Quantum bits, memories, devices(Superconducting circuits, Ion trapping, Trapped cold atoms, Photons, Quantum dots, etc.)
  • 2.3 Quantum materials(Topological materials/Thermoelectric devices/Functional materials)
Atsushi Kobayashi
Institute of Industrial Science
Project Associate Professor
We integrate the optoelectronic properties of nitride semiconductors and superconductors by an epitaxial growth technique, and apply them to novel quantum devices.
Meander nano-structures formed on a nitride superconductor
High-resolution transmission electron microscopic image of a superconductor/semiconductor interface

Related links

Research collaborators

Hiroshi Fujioka Institute of Industrial Science Professor

Related publications

“Coherent epitaxial growth of superconducting NbN ultrathin films on AlN by sputtering”, A. Kobayashi, K. Ueno, H. Fujioka, Applied Physics Express 13, 061006 (2020).


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